- Current - Collector (Ic) (Max):
-
- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Frequency - Transition:
-
- Package / Case:
-
- Power - Max:
-
- Supplier Device Package:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Transistor Type : PNP - Pre-Biased
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Mounting Type : Surface Mount
- Resistor - Base (R1) : 4.7 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Product Status : Active
9 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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8,760
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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6,638
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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13
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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569
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
8,000
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
375
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
153
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
238
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
703
In-stock
|
RFQ Get Quote |