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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
(1)
20 @ 10mA, 5V
(1)
30 @ 5mA, 5V
(1)
68 @ 5mA, 5V
(1)
Resistor - Emitter Base (R2):
-
(1)
10 kOhms
(1)
4.7 kOhms
(1)
47 kOhms
(1)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
(1)
300mV @ 500µA, 10mA
(3)
Voltage - Collector Emitter Breakdown (Max):
40 V
(1)
50 V
(3)
Filter:
Transistors - Bipolar (BJT) - Single, Pre-Biased
onsemi
Transistor Type : PNP - Pre-Biased
Resistor - Base (R1) : 4.7 kOhms
Current - Collector Cutoff (Max) : 100nA (ICBO)
Power - Max : 200 mW
Supplier Device Package : SOT-23-3
4 Records
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Part
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Description
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FJV4105RMTF
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FJV4105RMTF
onsemi
TRANS PREBIAS PNP 200MW SOT23-3
Stock : 651
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FJV4109RMTF
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TRANS PREBIAS PNP 200MW SOT23-3
Stock : 108
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FJV4101RMTF
onsemi
TRANS PREBIAS PNP 200MW SOT23-3
Stock : 537
RFQ
FJV4114RMTF
onsemi
TRANS PREBIAS PNP 200MW SOT23-3
Stock : 435
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