- Current - Collector Cutoff (Max):
-
- Frequency - Transition:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Type : PNP - Pre-Biased
- Power - Max : 150 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Emitter Base (R2) : 22 kOhms
- Resistor - Base (R1) : 22 kOhms
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
6,890
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
741
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
-
|
400
In-stock
|
Get Quote |