- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Type : PNP - Pre-Biased
- Power - Max : 150 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Emitter Base (R2) : 22 kOhms
- Product Status : Active
- Current - Collector Cutoff (Max) : 100nA (ICBO)
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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400
In-stock
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Get Quote |