- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Resistor - Emitter Base (R2):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- NXP Semiconductors
- Transistor Type : PNP - Pre-Biased
- Power - Max : 150 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Supplier Device Package : SC-75
- Frequency - Transition : -
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Resistor - Base (R1) : 22 kOhms
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
NXP Semiconductors |
|
684
In-stock
|
RFQ Get Quote | |||
![]() |
NXP Semiconductors |
|
799
In-stock
|
RFQ Get Quote | |||
![]() |
NXP Semiconductors |
|
664
In-stock
|
RFQ Get Quote |