- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Frequency - Transition:
-
- Resistor - Base (R1):
-
- Resistor - Emitter Base (R2):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- NXP Semiconductors
- Transistor Type : PNP - Pre-Biased
- Power - Max : 150 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Supplier Device Package : SC-75
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors |
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|
130
In-stock
|
Get Quote | |||
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NXP Semiconductors |
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400
In-stock
|
RFQ Get Quote |