- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Type : PNP - Pre-Biased
- Power - Max : 150 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 4.7 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Supplier Device Package : VESM
- Resistor - Emitter Base (R2) : 4.7 kOhms
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
6,638
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
8,000
In-stock
|
RFQ Get Quote |