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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Transistor Type : PNP - Pre-Biased
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Resistor - Base (R1) : 47 kOhms
- Current - Collector (Ic) (Max) : 100 mA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
|
6,000
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
619
In-stock
|
RFQ Get Quote |