- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Type : PNP - Pre-Biased
- Mounting Type : Surface Mount
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Frequency - Transition : -
- Resistor - Emitter Base (R2) : 10 kOhms
- Product Status : Active
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
4 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
15,990
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
3,000
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
255
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
323
In-stock
|
RFQ Get Quote |