- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Mounting Type : Surface Mount
- Frequency - Transition : 250 MHz
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Base (R1) : 4.7 kOhms
- Transistor Type : PNP - Pre-Biased
- Power - Max : 150 mW
- Supplier Device Package : VESM
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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3,033
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
519
In-stock
|
RFQ Get Quote |