- Frequency - Transition:
-
- Package / Case:
-
- Power - Max:
-
- Supplier Device Package:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Resistor - Emitter Base (R2) : 47 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Mounting Type : Surface Mount
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Base (R1) : 4.7 kOhms
- Transistor Type : PNP - Pre-Biased
9 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation |
|
5,525
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
3,000
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
2,900
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
2,800
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
2,900
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
3,033
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
519
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
769
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
-
|
211
In-stock
|
Get Quote |