- Manufacturer:
-
- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Package / Case:
-
- Power - Max:
-
- Supplier Device Package:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Frequency - Transition : 250 MHz
- Mounting Type : Surface Mount
- Resistor - Base (R1) : 4.7 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Product Status : Active
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
8 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation |
|
5,685
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
11,620
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
135
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
751
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
508
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
704
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
756
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
798
In-stock
|
RFQ Get Quote |