- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Base (R1) : 1 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Emitter Base (R2) : 10 kOhms
- Transistor Type : NPN - Pre-Biased
- Power - Max : 200 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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ROHM Semiconductor |
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478
In-stock
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RFQ Get Quote |