- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- onsemi
- Resistor - Base (R1) : 47 kOhms
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Power - Max : 300 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Frequency - Transition : 250 MHz
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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