- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : -
- Current - Collector Cutoff (Max) : 500nA (ICBO)
- Power - Max : 200 mW
- Frequency - Transition : 200 MHz
- Voltage - Collector Emitter Breakdown (Max) : 40 V
- Transistor Type : NPN - Pre-Biased
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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ROHM Semiconductor |
|
23,925
In-stock
|
RFQ Get Quote | |||
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ROHM Semiconductor |
|
121
In-stock
|
RFQ Get Quote |