- Frequency - Transition:
-
- Package / Case:
-
- Power - Max:
-
- Supplier Device Package:
-
- Transistor Type:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Product Status : Active
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 500nA
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Resistor - Base (R1) : 47 kOhms
9 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation |
|
6,000
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
5,796
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
1,089
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
2,770
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
525
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
673
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
619
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
420
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
156
In-stock
|
RFQ Get Quote |