- Package / Case:
-
- Power - Max:
-
- Supplier Device Package:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Product Status : Active
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 500nA
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Transistor Type : NPN - Pre-Biased
- Resistor - Base (R1) : 2.2 kOhms
7 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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1,629
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
718
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
100
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
588
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
490
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
446
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
660
In-stock
|
RFQ Get Quote |