- Frequency - Transition:
-
- Resistor - Base (R1):
-
- Transistor Type:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Product Status : Active
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Mounting Type : Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Current - Collector Cutoff (Max) : 500nA
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
6 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation |
|
6,638
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
6,529
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
585
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
8,000
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
597
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
747
In-stock
|
RFQ Get Quote |