- Manufacturer:
-
- Frequency - Transition:
-
- Package / Case:
-
- Resistor - Base (R1):
-
- Supplier Device Package:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Product Status : Active
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Mounting Type : Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Power - Max : 150 mW
- Transistor Type : NPN - Pre-Biased
8 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
ROHM Semiconductor |
|
28,753
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
50,504
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
6,529
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
3,000
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
585
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
597
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
495
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
-
|
503
In-stock
|
Get Quote |