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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Product Status : Active
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Resistor - Emitter Base (R2) : 47 kOhms
- Resistor - Base (R1) : 4.7 kOhms
- Transistor Type : PNP - Pre-Biased
- Power - Max : 200 mW
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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5,525
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
2,800
In-stock
|
RFQ Get Quote |