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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
Resistor - Base (R1):
10 kOhms
(1)
22 kOhms
(1)
4.7 kOhms
(1)
Filter:
Transistors - Bipolar (BJT) - Single, Pre-Biased
onsemi
Power - Max : 200 mW
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
Resistor - Emitter Base (R2) : 47 kOhms
Transistor Type : NPN - Pre-Biased
Package / Case : SC-89, SOT-490
3 Records
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Part
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FJY3006R
onsemi
TRANS PREBIAS NP...
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RFQ
433
In-stock
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FJY3007R
onsemi
TRANS PREBIAS NP...
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PDF
RFQ
724
In-stock
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FJY3014R
onsemi
TRANS PREBIAS NP...
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728
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FJY3006R
onsemi
TRANS PREBIAS NPN 200MW SOT523F
Stock : 433
RFQ
FJY3007R
onsemi
TRANS PREBIAS NPN 200MW SOT523F
Stock : 724
RFQ
FJY3014R
onsemi
TRANS PREBIAS NPN 200MW SOT523F
Stock : 728
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