- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Power - Max : 200 mW
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 22 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Supplier Device Package : SOT-323
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