- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Power - Max : 200 mW
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 22 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Current - Collector (Ic) (Max) : 70 mA
- Supplier Device Package : PG-SOT23
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Infineon Technologies |
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764
In-stock
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RFQ Get Quote |