- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Mounting Type : Surface Mount
- Resistor - Emitter Base (R2) : -
- Power - Max : 150 mW
- Resistor - Base (R1) : 4.7 kOhms
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Transistor Type : PNP - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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357
In-stock
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